Method and apparatus for strapping two polysilicon lines in...

Details Method and apparatus for strapping two polysilicon lines in... Method and apparatus for strapping two polysilicon lines in...

2009-08-17

2010-11-09

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S775000, C257SE23164, C257S754000, C257S773000

Reexamination Certificate

active

07829459

ABSTRACT:
A method and apparatus for partially strapping two polysilicon lines, each having a first end and second end, uses a metal line having a plurality of spaced apart metal segments with each metal segment partially strapping a different portion of a polysilicon line. The metal segments are arranged from the first end to the second end with the signals propagating from the second end to the first end. Where two metal segments are used, the segments have lengths ofx=2⁢⁢L7and L-X where L is the length between the first end and the second end. Where three segments are used, the segments have lengths of X=0.25 L, Y=0.48 L, and Z=0.27 L.

REFERENCES:
patent: 6455942 (2002-09-01), Nguyen

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