Method and apparatus for storing data in a write-once...

Details Method and apparatus for storing data in a write-once... Method and apparatus for storing data in a write-once...

2005-05-27

2008-11-25

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S049130, C365S185240, C365S205000

Reexamination Certificate

active

07457180

ABSTRACT:
An apparatus and method for forming a write-once non-volatile memory cell. A memory cell comprises a first and a second MOSFET, wherein the first MOSFET undergoes a process to modify the threshold voltage such that a modified threshold voltage represents a first stored logic value. By determining which one of the first and the second MOSFETS has an altered threshold voltage, the stored logic value is determinable. The threshold voltage of the first MOSFET is altered by supplying current through a MOSFET gate, causing a gate heating effect that results in a threshold voltage shift.

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patent: 7049200 (2006-05-01), Arghavani et al.
patent: 2006/0133122 (2006-06-01), Haid et al.

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