Method and apparatus for static RAM

Static information storage and retrieval – Systems using particular element – Semiconductive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 66, 257 67, 257 68, 257903, 365154, G11C 1134, H01L 2701

Patent

active

053792513

ABSTRACT:
An SRAM memory cell structure, wherein a word line is disposed near the center of a cell, each one of driver transistors is disposed on both sides thereof substantially in parallel with each other, a contact portion for a gate electrode of said driver transistor is formed being laminated on a word transistor formed together with said word line, and a semiconductor, wherein an upper transistor and a lower transistor are disposed, an overlapped portion in which at least three layers each having a diffusion region for forming each of said transistors are overlapped is formed, and a contact is taken at said overlapped portion.

REFERENCES:
patent: 5239196 (1993-08-01), Ikeda et al.
patent: 5243203 (1993-09-01), Hayden et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for static RAM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for static RAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for static RAM will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2216224

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.