Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1993-05-13
1995-01-03
LaRoche, Eugene R.
Static information storage and retrieval
Systems using particular element
Semiconductive
257 66, 257 67, 257 68, 257903, 365154, G11C 1134, H01L 2701
Patent
active
053792513
ABSTRACT:
An SRAM memory cell structure, wherein a word line is disposed near the center of a cell, each one of driver transistors is disposed on both sides thereof substantially in parallel with each other, a contact portion for a gate electrode of said driver transistor is formed being laminated on a word transistor formed together with said word line, and a semiconductor, wherein an upper transistor and a lower transistor are disposed, an overlapped portion in which at least three layers each having a diffusion region for forming each of said transistors are overlapped is formed, and a contact is taken at said overlapped portion.
REFERENCES:
patent: 5239196 (1993-08-01), Ikeda et al.
patent: 5243203 (1993-09-01), Hayden et al.
Negishi Michio
Takeda Minoru
LaRoche Eugene R.
Niranjan F.
Sony Corporation
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