Method and apparatus for sputtering magnetic target materials

Details Method and apparatus for sputtering magnetic target materials Method and apparatus for sputtering magnetic target materials

1993-10-22

1995-05-16

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429816, 20429819, C23C 1434

Patent

active

054157544

ABSTRACT:
A sputtering magnet assembly generates a magnetic field having sufficient strength to produce a plasma-confining magnetic tunnel over the front surface of a magnetic target. A magnetic shunt positioned a spaced distance from the back surface of the magnetic target provides an alternate path for excess magnetic flux liberated by erosion of the target. The alternate path provided by the magnetic shunt has a lower magnetic resistance than most paths that exit the front surface of the target, pass into the sputtering region, and re-enter the front surface of the target. Accordingly, most of the excess magnetic flux is prevented from escaping into the sputtering region.

REFERENCES:
patent: 4865708 (1989-09-01), Welty
patent: 4964968 (1990-10-01), Arita
patent: 5262028 (1993-11-01), Manley

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