Method and apparatus for sputter deposition of a semiconductor h

Details Method and apparatus for sputter deposition of a semiconductor h Method and apparatus for sputter deposition of a semiconductor h

1987-05-06

1989-04-04

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

204298, C23C 1454, C23C 1456

Patent

active

048183571

ABSTRACT:
A vacuum chamber is provided for sputter deposition of a semiconductor homojunction. A target made of a semiconductor compound containing at least one non-metallic element is provided. A substrate for receiving the sputtered species from the target to form sequential layers of deposited semiconductor material is also provided. An electric field is provided between the target and the substrate. An inert gas is introduced sequentially at a plurality of discrete partial pressures to adjust the incident energy of the sputtered species by thermalization, for altering the mean free path of the sputtered and incident species to control the ratio of non-metallic to metallic elements in the deposited semiconductor material and create a plurality of different semiconductor material layers.

REFERENCES:
patent: 4057476 (1977-11-01), Krikorian et al.
patent: 4283260 (1981-08-01), Thomas et al.
patent: 4417092 (1983-11-01), Moustakas et al.
patent: 4465575 (1984-08-01), Love et al.
patent: 4647338 (1987-03-01), Visser

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