Method and apparatus for sputter coating stepped wafers

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419213, 20429803, 20429817, 20429818, 20429819, 20429812, 20429808, 20429816, C23C 1435

Patent

active

049576054

ABSTRACT:
A magnetron sputtering method and apparatus employing a one-piece annular target having a concave continuously smooth surface with an inwardly facing portion close to and surrounding the outer edge of a stepped wafer provides a sputtering surface with areas facing the differently facing surfaces of the wafer steps. Two concentric erosion zones on the target surface are independently energized at different electrical parameter values by synchronizing the power applied to the single target with switched activation of plasmas overlying the respective target regions which define the erosion zones. The electrical parameters and the geometry are established so as to uniformly coat the differently facing surfaces of the stepped wafer. During part of the duty cycle during which each target region is energized, parameters may be measured. Such parameters may be those which vary with changes in geometry as for example may be due to target erosion. The operation of different target regions, such as the duty cycles or power levels for such regions, may be separately varied in response to the measurements or otherwise, to maintain uniform substrate coating as the target erodes. The target is thicker under the outer region and has an annular pole piece embedded to reduce the space separating the target erosion regions, and includes means to cool the target and reinforce it against thermal expansion.

REFERENCES:
patent: 3669871 (1972-06-01), Elmgren et al.
patent: 3878085 (1975-04-01), Corbani
patent: 3884793 (1975-05-01), Penfold et al.
patent: 3956093 (1975-05-01), Mcleod
patent: 4041353 (1977-08-01), Penfold et al.
patent: 4100055 (1978-07-01), Rainey
patent: 4166018 (1979-08-01), Chapin
patent: 4166783 (1979-09-01), Turner
patent: 4401539 (1983-08-01), Abe et al.
patent: 4416759 (1983-11-01), Harra
patent: 4444635 (1984-04-01), Kobayashi et al.
patent: 4500408 (1985-02-01), Boys et al.
patent: 4500409 (1985-02-01), Boys et al.
patent: 4569746 (1986-02-01), Hutchinson
patent: 4595482 (1986-06-01), Mintz
patent: 4604180 (1986-08-01), Hirukawa et al.
patent: 4606806 (1986-08-01), Helmer
patent: 4622121 (1986-11-01), Wegmann et al.
patent: 4692230 (1987-09-01), Nihei et al.
patent: 4724060 (1988-02-01), Sakata et al.
patent: 4734183 (1988-03-01), Wirz et al.
patent: 4747926 (1988-03-01), Shimizu et al.
patent: 4761218 (1988-08-01), Boys
patent: 4810335 (1989-03-01), Hieber
patent: 4810346 (1989-03-01), Wolf et al.
patent: 4834860 (1989-05-01), Demaray et al.
patent: 4842703 (1989-06-01), Class et al.
patent: 4853102 (1989-08-01), Tateishi et al.
patent: 4855033 (1989-08-01), Hurwitt
Research/Development, Feb. 1971, pp. 41-44.

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