Method and apparatus for SOI transistor

Details Method and apparatus for SOI transistor Method and apparatus for SOI transistor

1994-10-06

1997-05-13

Wilczewski, Mary

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

438766, 438162, H01L 2126, H01L 21265, H01L 21306, H01L 21479

Patent

active

056292171

ABSTRACT:
A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.

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patent: 5373803 (1994-12-01), Noguchi et al.
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