Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1999-04-28
2000-08-29
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
156345, 216 88, 216 89, 438693, 438745, H01L 2100
Patent
active
061108324
ABSTRACT:
A method and apparatus for Chemical-Mechanical Polishing of semiconductor wafers using various formulations of high viscosity slurry.
REFERENCES:
patent: 4323422 (1982-04-01), Calawa et al.
patent: 5216843 (1993-06-01), Breivogel et al.
patent: 5478435 (1995-12-01), Murphy et al.
patent: 5658185 (1997-08-01), Morgan et al.
patent: 5896870 (1999-04-01), Huynh et al.
J. M. Steigerwald, et al, "Chemical Mechanical Planarization of Microelectronic Materials," Section 3.2, pp 40-41.
Morgan, III Clifford O.
Rutten Matthew J.
Walton Erick G.
Wright Terrance M.
Henkler Richard A.
International Business Machines - Corporation
Powell William
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