Method and apparatus for silicon oxide deposition on large...

Details Method and apparatus for silicon oxide deposition on large... Method and apparatus for silicon oxide deposition on large...

2006-04-18

2006-04-18

Fuqua, Shawntina T. (Department: 3742)

Electric resistance heating devices

Heating devices

Vaporizer

C392S386000, C392S387000, C392S394000, C392S397000, C392S400000, C427S579000, C427S166000, C118S715000, C118S726000

Reexamination Certificate

active

07031600

ABSTRACT:
A method and apparatus for depositing a dielectric material at a rate of at least 3000 Angstroms per minute on a large area substrate that has a surface area of at least about 0.35 square meters is provided. In one embodiment, the dielectric material is silicon oxide. Also provided is a large area substrate having a layer of dielectric material deposited by a process yielding a deposition rate in excess of about 3000 Angstroms per minute and a processing chamber for fabricating the same.

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Copy of International Search Report dated Oct. 21, 2004 for corresponding PCT application, PCT/US2004/010543.

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