Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2005-10-11
2005-10-11
Tran, M. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S203000
Reexamination Certificate
active
06954385
ABSTRACT:
A sense circuit for reading a resistance level of a programmable conductor random access memory (PCRAM) cell is provided. A voltage potential difference is introduced across a PCRAM cell by activating an access transistor from a raised rowline voltage. Both a digit line and a digit complement reference line are precharged to a first predetermined voltage. The cell being sensed has the precharged voltage discharged through the resistance of the programmable conductor memory element of the PCRAM cell. A comparison is made of the voltage read at the digit line and at the reference conductor. If the voltage at the digit line is greater than the reference voltage, the cell is read as a high resistance value (e.g., logic HIGH); however, if the voltage measured at the digit line is lower than that of the reference voltage, the cell is read as a low resistance value (e.g., logic LOW).
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Casper Stephen L.
Duesman Kevin
Hush Glen
Dickstein , Shapiro, Morin & Oshinsky, LLP
Tran M.
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