Method and apparatus for semiconductor wafer planarization

Details Method and apparatus for semiconductor wafer planarization Method and apparatus for semiconductor wafer planarization

2008-05-06

2008-05-06

Edwards, Laura (Department: 1792)

Coating apparatus

Immersion or work-confined pool type

With tank structure, liquid supply, control, and/or...

C118S620000, C451S036000, C451S041000

Reexamination Certificate

active

10734704

ABSTRACT:
Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a planarizing layer over the wafer, wherein the planarizing layer serves to fill recessed areas present on a surface of the wafer. A planar member is positioned over and proximate to a top surface of the wafer. Positioning of the planar member serves to entrap electroless plating solution between the planar member and the wafer surface. Radiant energy is applied to the wafer surface to cause a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase in turn causes plating reactions to occur at the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.

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patent: 2004/0192173 (2004-09-01), Zuniga et al.
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