Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2007-11-20
2007-11-20
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S270000, C438S513000, C438S680000, C257SE21170, C257SE21680, C257S021000
Reexamination Certificate
active
11055427
ABSTRACT:
Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for semiconductor device and nonvolatile memory device. The device comprises a strain source, an injection filter, a first conductive region, a second conductive region, and a charge collecting region. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism in device operations. The injection filter permits transporting of charge carriers of one polarity type from the first conductive region, through the filter, and through the second conductive region to the charge collecting region while blocking the transport of charge carriers of an opposite polarity from the second conductive region to the first conductive region. The present invention further provides an energy band engineering method permitting the devices be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.
REFERENCES:
patent: 3943543 (1976-03-01), Caywood
patent: 3944849 (1976-03-01), Tasch, Jr. et al.
patent: 4072977 (1978-02-01), Bate et al.
patent: 4462090 (1984-07-01), Iizuka et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 5029130 (1991-07-01), Yeh
patent: 5070480 (1991-12-01), Caywood
patent: 5095344 (1992-03-01), Harari
patent: 5146426 (1992-09-01), Mukherjee et al.
patent: 5153880 (1992-10-01), Owen et al.
patent: 5161157 (1992-11-01), Owen et al.
patent: 5235544 (1993-08-01), Caywood
patent: 5268319 (1993-12-01), Harari
patent: 5270980 (1993-12-01), Pathak et al.
patent: 5280446 (1994-01-01), Ma et al.
patent: 5286994 (1994-02-01), Ozawa et al.
patent: 5426316 (1995-06-01), Mohammad
patent: 5429965 (1995-07-01), Shimoji
patent: 5432739 (1995-07-01), Pein
patent: 5517044 (1996-05-01), Koyama et al.
patent: 5523243 (1996-06-01), Mohammad
patent: 5557122 (1996-09-01), Shrivastava et al.
patent: 5559735 (1996-09-01), Ono et al.
patent: 5563083 (1996-10-01), Pein
patent: 5621738 (1997-04-01), Caywood et al.
patent: 5714766 (1998-02-01), Chen et al.
patent: 5764096 (1998-06-01), Lipp et al.
patent: 5768192 (1998-06-01), Eitan
patent: 5780341 (1998-07-01), Ogura
patent: 5790455 (1998-08-01), Caywood
patent: 5792670 (1998-08-01), Pio et al.
patent: 5822242 (1998-10-01), Chen
patent: 5838039 (1998-11-01), Sato et al.
patent: 5847427 (1998-12-01), Hagiwara
patent: 5847996 (1998-12-01), Guterman et al.
patent: 5883409 (1999-03-01), Guterman et al.
patent: 5966329 (1999-10-01), Hsu et al.
patent: 6002152 (1999-12-01), Guterman et al.
patent: 6080995 (2000-06-01), Nomoto
patent: 6091104 (2000-07-01), Chen
patent: 6103573 (2000-08-01), Harari
patent: 6104057 (2000-08-01), Nakanishi et al.
patent: 6201732 (2001-03-01), Caywood
patent: 6211562 (2001-04-01), Forbes et al.
patent: 6303940 (2001-10-01), Kizilyalli et al.
patent: 6384451 (2002-05-01), Caywood
patent: 6388922 (2002-05-01), Fujiwara et al.
patent: 6407424 (2002-06-01), Forbes
patent: 6411545 (2002-06-01), Caywood
patent: 6426896 (2002-07-01), Chen
patent: 6449189 (2002-09-01), Mihnea et al.
patent: 6451652 (2002-09-01), Caywood
patent: 6479863 (2002-11-01), Caywood
patent: 6503785 (2003-01-01), Chen
patent: 6534816 (2003-03-01), Caywood
patent: 6555865 (2003-04-01), Lee
patent: 6574140 (2003-06-01), Caywood
patent: 6580124 (2003-06-01), Cleeves et al.
patent: 6580642 (2003-06-01), Wang
patent: 6680505 (2004-01-01), Ohba et al.
patent: 6709928 (2004-03-01), Jenne et al.
patent: 6734105 (2004-05-01), Kim
patent: 6744111 (2004-06-01), Wu
patent: 6745370 (2004-06-01), Segal et al.
patent: 6747310 (2004-06-01), Fan
patent: 6753568 (2004-06-01), Nakazato et al.
patent: 6756633 (2004-06-01), Wang et al.
patent: 6791883 (2004-09-01), Swift et al.
patent: 6815764 (2004-11-01), Bae et al.
patent: 6847556 (2005-01-01), Cho
patent: 6853583 (2005-02-01), Diorio et al.
patent: 6897514 (2005-05-01), Kouznetsov et al.
patent: 6958513 (2005-10-01), Wang
patent: 7015102 (2006-03-01), Wang
patent: 7115942 (2006-10-01), Wang
patent: 7149118 (2006-12-01), Diorio et al.
patent: 2005/0247972 (2005-11-01), Forbes
patent: 2006/0284236 (2006-12-01), Bhattacharyya
U.S. Appl. No. 10/105,741, filed Sep. 25, 2003, Kianian et al.
U.S. Appl. No. 10/192,291, filed Jul. 24, 2003, Wang.
U.S. Appl. No. 09/925,134, filed Jan. 1, 2004, Harari et al.
U.S. Appl. No. 09/916,555, filed Mar. 21, 2002, Wang et al.
U.S. Appl. No. 10/776,483, filed Aug. 19, 2004, Kianian et al.
U.S. Appl. No. 10/799,180, filed Sep. 9, 2004, Yuan et al.
U.S. Appl. No. 10/718,662, filed Jul. 8, 2004, Kan et al.
U.S. Appl. No. 10/850,031, filed Oct. 28, 2004, Wang et al.
U.S. Appl. No. 09/942,338, filed Feb. 5, 2004, Caywood.
U.S. Appl. No. 10/797,296, filed Dec. 16, 2004, Lee et al.
U.S. Appl. No. 10/183,834, filed Jul. 3, 2003, Wang et al.
U.S. Appl. No. 09/955,285, filed Dec. 5, 2002, Kim
U.S. Appl. No. 09/881,332, filed Dec. 19, 2002, Jones et al.
U.S. Appl. No. 10/330,851, filed Jul. 3, 2003, Lee et al.
U.S. Appl. No. 10/348,267, filed Jul. 17, 2003, Jones et al.
U.S. Appl. No. 10/040,724, filed May 1, 2003, Wang et al.
U.S. Appl. No. 10/409,407, filed Oct. 7, 2004, Chen et al.
U.S. Appl. No. 10/849,975, filed Oct. 28, 2004, Wang et al.
U.S. Appl. No. 10/848,982, filed Oct. 28, 2004, Wang.
C. A. Mead, “The Tunnel-Emission Amplifier”, Proceedings of the IRE, pp. 359-361, 1960.
Fischetti et al., “Six-band k.p calculation of hole mobility in silicon inversion layers: depedence on surface . . . ,” Journal of Appl. Physics, vol. 94, pp. 1079-1095, 2003.
Hensel et al., Cyclotron Resonance Experiments in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation . . . , Phys. Rev. 129, pp. 1141-1062, 1963.
Vogelsang et al., “Electron Mobilities and High-Field Drift Velocity in Strained Silicon on Silicon-Germanium Substrate”, IEEE Trans. on Electron Devices, pp. 2641-2642, 1992.
Hinckley et al., “Hole Transport Theory in Pseudomorphic Si1−x Gex Alloys Grown on Si(001) Substrates,” Phys. Rev. B, 41, pp. 2912-2926, 1990.
Bock et al., “3.3ps SiGe Bipolar Technology”, Proceeding of the IEDM, pp. 255-258, 2004.
U.S. Appl. No. 09/866,938, filed Oct. 11, 2001, Noble et al.
U.S. Appl. No. 10/066,376, filed Oct. 3, 2002, Kouznetsov et al.
U.S. Appl. No. 10/205,289, filed Mar. 20, 2003, Wang
U.S. Appl. No. 09/860,704, filed Nov. 13, 2003, Harari et al.
U.S. Appl. No. 10/393,896, filed Sep. 23, 2004, Chen et al.
Caywood, John M. et al; “A Novel Nonvolatile Memory Cell Suitable for Both Flash and Byte-Writable Applications”; IEEE Transactions on Electron Devices, vol. 49, No. 5, May 2002; pp. 802-807.
SMA5111 - Compound Semiconductors; Lecture 2 - Metal-Semiconductor Junctions - Outline; C. G. Fonstad; Feb. 2003; 22 pages.
H. Fujiwara et al; “High-Efficiency Programming with Inter-Gate Hot-Electron Injection for Flash. . . ,” Digest of Non-Volatile Semiconductor Memory Workshop, Feb. 2000; p. 127.
S. Sze; “Physics of Semiconductor Devices,” Wiley-Interscience, 1981, “Schotky Effect”, pp. 250-253.
Lenzlinger and Snow; “Fowler-Nordheim Tunneling into Thermally Grown SiO2,” J. Appl. Phys., vol. 40, No. 1, Jan. 1969; pp. 278-283.
Nicollian and Brews; “MOS Physics and Technology,” Wiley-Interscience, 1982, “Photo I-V method - Basics”, pp. 512-515.
U.S. Appl. No. 10/791,486, filed Aug. 26, 2004, Harari.
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