Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-31
2008-07-22
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S675000, C438S799000, C257SE21586
Reexamination Certificate
active
07402517
ABSTRACT:
Methods are disclosed for depositing materials selectively and controllably from liquid, near-critical, and/or supercritical fluids to a substrate or surface controlling the location and/or thickness of material(s) deposited to the surface or substrate. In one exemplary process, metals are deposited selectively filling feature patterns (e.g., vias) of substrates. The process can be further used to control deposition of materials on sub-surfaces of composite or structured silicon wafers, e.g., for the deposition of barrier films on silicon wafer surfaces. Materials include, but are not limited to, overburden materials, metals, non-metals, layered materials, organics, polymers, and semiconductor materials. The instant invention finds application in such commercial processes as semiconductor chip manufacturing. In particular, selective deposition is envisioned to provide alternatives to, or decrease need for, such processes as Chemical Mechanical Planarization of silicon surfaces in semiconductor chip manufacturing due to selective filling and/or coating of pattern features with metals deposited from liquid, near-critical, or supercritical fluids.
REFERENCES:
patent: 4670086 (1987-06-01), Leamy
patent: 4734227 (1988-03-01), Smith
patent: 6429152 (2002-08-01), Yang et al.
patent: 6689700 (2004-02-01), Watkins et al.
patent: 6905541 (2005-06-01), Chen et al.
patent: 2003/0161954 (2003-08-01), Blackburn et al.
patent: 2003/0183938 (2003-10-01), Wai et al.
patent: 2004/0120870 (2004-06-01), Blackburn et al.
patent: 0132951 (2001-05-01), None
David G. Cahill, et al., Thermal conductivityof sputtered & evaporated SIO2 and TIO2 optical coatings, Appl. Phys. Lett. 65 (3) Jul. 18, 1994, pp. 309-311.
Delan, et al., Thermal Conductivity Measurement of Thin Dielectric Films Using the 3w Technique, pp. 49-50, Mar. 2003.
David G. Cahill, Thermal conductivity measurement from 30 to 750 K: the 3w method, Rev. Sci. Instrum. 61 (2), Feb. 1990, pp. 802-808.
Becker, et al., Highly Conformal Thin Films of Tungsten Nitride Prepared by Atomic Layer Deposition from a Novel Precursor, Chem. Mater., vol. 15, No. 15, 2003, pp. 2969-2976.
Delan, et al., Thermal Conductivity Measurement of Thin Dielectric Films Using the 3w Technique, pp. 49-50.
PCT International Search report and Written Opinion, Nov. 2007.
O.A. Louchev et al., The morphological stability in supercritical fluid chemical deposition of films near the critical point, Journal of Crystal growth, No. 155, 1995, pp. 276-285 (XP002457043).
Deverman George S.
Gaspar Daniel J.
Matson Dean W.
Yonker Clement R.
Battelle (Memorial Institute)
Matheson James D.
Smoot Stephen W.
LandOfFree
Method and apparatus for selective deposition of materials... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for selective deposition of materials..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for selective deposition of materials... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3968771