Method and apparatus for selective deposition

Details Method and apparatus for selective deposition Method and apparatus for selective deposition

2007-07-03

2007-07-03

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S652000, C438S653000, C438S677000, C257SE21586

Reexamination Certificate

active

10404775

ABSTRACT:
A method for selectively depositing a source material on a wafer is disclosed. In one embodiment, a wafer is having at least one recessed feature is provided. A top surface of the wafer is then coated with an inhibiting material. Finally, a source material is selectively deposited in the at least one recessed feature, the source material repelled by the inhibiting material. In another embodiment, the inhibiting material is one of a wax, a surfactant or an oil.

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Stanley Wolf Silicon Processing for the VSLI Era vol. 4 Lattice Press 2002 p. 639.

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