Method and apparatus for scanning and measurement by...

Radiant energy – Inspection of solids or liquids by charged particles – Methods

Reexamination Certificate

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C250S306000, C250S310000, C250S311000, C250S399000

Reexamination Certificate

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07655906

ABSTRACT:
An inspection and measurement method and apparatus for semiconductor devices and patterns such as photomasks using an electron beam capable of measuring the potential of a sample with higher precision than conventional systems. When an S curve is observed in a semiconductor device to be inspected, fluctuations of the potential of the inspection sample surface are suppressed by optimizing the energy of a primary electron beam used for irradiation. When the surface potential of the semiconductor device is measured, a more precise measurement can be obtained without adverse effects from an insulation film surface. Further, the surface potential can be measured without installing a special apparatus for wafer surface potential measurement such as an energy filter, so the cost of the apparatus can be reduced.

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A. Gopinath, Voltage Contrast, Scanning Electron Microscopy, 1978, vol. I, pp. 375-380.

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