Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Patent
1994-12-27
1996-10-29
Powell, William
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
216 24, 216 66, 216 81, 156345, B44C 122
Patent
active
055693920
ABSTRACT:
At eliminating a bump defect having a partially projecting shape in a region to be flat, a carbon deposit layer covering the bump defect is etched under the condition of a selectivity of 1:1 of an etching rate of a carbon and mask material at least until the bump defect is exposed, a carbon line is formed by depositing a carbon along a straight line in view of the surface thereof, a discrepancy amount is measured between an etched carbon surface and a carbon line on a flat mask surface on the basis of an observation of the phase shift mask in the oblique direction to the surface, and the carbon deposit layer and carbon line remaining on the mask are perfectly eliminated by etching until the discrepancy amount becomes zero, thereby providing a method and apparatus for repairing the defect on the phase shift mask capable of observing in situ an etching amount.
REFERENCES:
patent: 5358806 (1994-10-01), Haraichi et al.
Journal of Physics E: Scientific Instruments 1971, vol. 4, R. A. Hoover, "Measuring Surface Variations With the Scanning Electron Microscope Using Deposited Contamination Lines", pp. 747-749.
Miyoshi Motosuke
Okumura Katsuya
Kabushiki Kaisha Toshiba
Powell William
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