Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Patent
1996-10-29
1998-07-14
Kunemund, Robert
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
216 67, 216 71, B08B 312, B44C 122
Patent
active
057798079
ABSTRACT:
An electrostatic technique for removing particulate matter from a semiconductor wafer in a plasma processing chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber. During a particulate removal phase of operation, a normally grounded electrode that supports the wafer is temporarily isolated from ground and a bias voltage generator is simultaneously connected to the electrode, supplying sufficient bias voltage to electrostatically launch particulates from the surface of the wafer. A plasma formed above the normally grounded electrode is maintained during the particulate removal phase, and particulates launched from the wafer become suspended in a sheath region surrounding the plasma, from where they can be later removed by a purging flow of gas. Preferably, the bias voltage generator provides a bias voltage that alternates in polarity, to ensure removal of both positively-charged and negatively charged particles from the wafer surface.
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Dornfest Charles
Girard Gerald
Gupta Anand
Applied Materials Inc.
Church Shirley L.
Goudreau George
Heal Noel F.
Kunemund Robert
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