Method and apparatus for removal of subsurface damage in semicon

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156657, 156662, 156345, 134 1, H01L 21306, B44C 122

Patent

active

052385329

ABSTRACT:
A high pressure plasma is used in conjunction with a plasma assisted chemical etching material removal tool 10 to rapidly remove subsurface damage from a substrate without mechanically contacting the surface and without introducing new microscopic or atomic damage to the substrate.

REFERENCES:
patent: 3943047 (1976-03-01), Cruzan et al.
patent: 4874460 (1989-10-01), Nakagawa et al.
patent: 4964940 (1990-10-01), Auvert et al.
patent: 5009738 (1991-04-01), Gruenwald et al.
patent: 5076877 (1991-12-01), Ueda et al.

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