Method and apparatus for redundancy word line replacement in a s

Static information storage and retrieval – Read/write circuit – Bad bit

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365201, 365149, 371 103, G11C 700, G11C 2900

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active

055552129

ABSTRACT:
A method and apparatus for redundancy word line replacement in a semiconductor device involves generating a control signal which causes the data on the data lines to be flipped when the bit pattern of the memory cells coupled to a redundant word line are complementary to the bit pattern of the memory cells of a defective word line which is being replaced by the redundant word line. During both read and write operations, a data flip control signal is input to a data flip circuit to control the state of the bit information.

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