Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-04
2006-07-04
Loke, Steven (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S222000, C257S225000, C257S291000, C257S443000, C257S461000, C257S290000, C438S048000, C438S066000, C438S067000, C438S073000, C438S080000
Reexamination Certificate
active
07071505
ABSTRACT:
An imager having reduced floating diffusion leakage and a mechanism for improving the storing of collected charge is described. A polysilicon contact is provided between a floating diffusion region and a gate of a source follower output transistor, with the contact also electrically connected to a storage capacitor. The storage capacitor provides additional charge storage capacity to the floating diffusion region. In addition, an associated reset transistor has different dopant characteristics in the source and drain regions. The floating diffusion region may be used in the pixels of a CMOS imager or in the output stage of a CCD imager.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Loke Steven
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