Method and apparatus for reducing defects in SOI structures

Details Method and apparatus for reducing defects in SOI structures Method and apparatus for reducing defects in SOI structures

1990-11-02

1992-06-09

Kunemund, Robert

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

156603, 15662071, 15662073, 156DIG64, 156DIG73, 156DIG75, 156DIG76, 219535, 219536, 422250, C30B 1300

Patent

active

051205092

ABSTRACT:
A method and apparatus for reducing branching, reducing defects, and improving the overall surface morphology of silicon on insulator (SOI) structures produced by Zone Melting and Recrystallization (ZMR) is described. A special heater for use in preparing SOI structures formed by ZMR comprises a graphite mass having corrugations extending along one or more side walls and which may be periodic. The heater provides concentrated regions of heat which vary periodically across the length of the molten zone of the SOI structure. Alternatively, the heater comprises a stationary lower heater member upon which the wafer is placed and a movable upper heater member having corrugations. ZMR is achieved by translating the corrugated upper heater member past the wafer. In yet another alternative, a well known strip heater having a uniformly shaped movable upper member is improved by replacing the upper member with a movable upper heater member having corrugations.

REFERENCES:
patent: 2719799 (1955-10-01), Christian
patent: 3433627 (1969-03-01), Shou Chu Liang et al.
patent: 3984280 (1976-10-01), Besselere et al.
patent: 4068814 (1978-01-01), Anthony et al.
patent: 4086424 (1978-04-01), Mellen, Sr.
patent: 4097226 (1978-06-01), Erikson et al.
patent: 4135027 (1979-01-01), Anthony et al.
patent: 4196042 (1980-04-01), Rennolds
patent: 4371421 (1983-02-01), Fan et al.
patent: 4444620 (1984-04-01), Kovacs et al.
patent: 4479846 (1984-10-01), Smith et al.
patent: 4576676 (1986-03-01), Smith et al.
patent: 4578143 (1986-03-01), Arai
patent: 4694143 (1987-09-01), Nishimura et al.
patent: 4880962 (1989-11-01), Nolf et al.
patent: 4944835 (1990-07-01), Allen et al.
Geis, et al., J. Electrochem. Soc: Solid-State Science & Technology, 129(12): 2812-2818 (1982).
Fan, et al., Applied Physics Letters, 41(2): 186-188 (Jul. 1982).
"Transient Heating with Graphite Heaters for Semi Conductor Processing", Lincoln Laboratory, MIT, (1982), 751-758.
"Effects of heating-temperature gradient and scanning direction on crystallographic properties of zone-melting recrystallized silicon on square shaped fused quartz", Dept. of Electrical Engineering, Kyoto, Japan, (1984) pp. 2986-2988.

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