Method and apparatus for reducing charge loss in a...

Details Method and apparatus for reducing charge loss in a... Method and apparatus for reducing charge loss in a...

2007-11-06

2007-11-06

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S593000, C438S582000, C438S258000, C257SE27103

Reexamination Certificate

active

10872618

ABSTRACT:
A method of fabricating a non-volatile memory cell on a semiconductor substrate is disclosed. An area of a first region of the semiconductor substrate designated for a layer of floating polysilicon is blocked while a second region of the semiconductor substrate designated for a layer of non-floating polysilicon is exposed. Exposed regions of the semiconductor substrate are doped with charges.

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