Method and apparatus for real time monitoring of wafer attribute

Details Method and apparatus for real time monitoring of wafer attribute Method and apparatus for real time monitoring of wafer attribute

1995-11-07

1997-08-05

Trammell, James P.

Boots, shoes, and leggings

1566251, 1566261, 395 21, 395 22, 216 67, 36446828, 438 9, H05H 100, G05B 1304

Patent

active

056549032

ABSTRACT:
The present invention provides a method and apparatus for monitoring the state of an attribute of a product during the manufacturing process. The invention employs an intelligent system trained in the relationship between the signatures of the manufacturing process and the product attribute as a function of time. In one embodiment the intelligent system comprises two intelligent systems: the first, trained in the relationship between the signatures of the manufacturing process and one or more signatures of the state of the attribute as a function of time; and the second, trained in the relationship between the product-state signatures as a function of time and the product attribute as a function of time. The disclosed apparatus can be an integral part of the manufacturing machinery allowing the process to continue until the exact moment when the desired state is achieved.

REFERENCES:
patent: 4493745 (1985-01-01), Chen et al.
patent: 5282261 (1994-01-01), Skeirik
patent: 5355320 (1994-10-01), Erjavic et al.
patent: 5399229 (1995-03-01), Stefani et al.
patent: 5451289 (1995-09-01), Barbee et al.
patent: 5467883 (1995-11-01), Frye et al.
patent: 5500073 (1996-03-01), Barbee et al.
patent: 5526293 (1996-06-01), Mozunder et al.
patent: 5582746 (1996-12-01), Barbee et al.
Donnelly, V.M., "Optical Diagnostic Techniques for Low Pressure Plasmas and Plasma Processing," Plasma Diagnostics vol. 1 Discharge Parameters and Chemistry, Academic Press, New York (1989).
Rietman, E.A. and Lory, E.R., "Use of Neural Networks in Semiconductor Manufacturing Processes: An example for Plasma Etch Modeling," IEEE Trans. on Semi. Cond. Manuf., 6(4), 343-347 (1993).
Rietman, E.A., Frye, R.C., Lory, E.R. and Harry, T.R., "Active Neural Network Control of Wafer Attributes in a Plasma Etch Process," JVST B-11(4), 131-1316 (1993).
Rietman, E.A., Patel, S.H. and Lory, "Neural Network Control of a Plasma Etch Process," JVST B-11(4), 1314-1316 (1993).
Urban, III, F.K., and Tabet, M.F., "Development of Artificial Neural Networks for in situ Ellipsometry of Films Growing on Unknown Substrates," J.V.S.T. 1952-1956 (1994).

Affiliated with

Also associated with

Rating

Method and apparatus for real time monitoring of wafer attribute does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for real time monitoring of wafer attribute, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for real time monitoring of wafer attribute will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1079490