Method and apparatus for rapid cooldown of annealed wafer

Details Method and apparatus for rapid cooldown of annealed wafer Method and apparatus for rapid cooldown of annealed wafer

2007-07-10

2007-07-10

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S540000, C438S800000

Reexamination Certificate

active

10773517

ABSTRACT:
A method for annealing a semiconductor substrate. The method includes turning on at least one heat source, heating a semiconductor substrate in a chamber, turning off the at least one heat source, and cooling the semiconductor substrate in the chamber. The heating a semiconductor substrate includes absorbing an energy from the at least one heat source by the semiconductor substrate. Moreover, the cooling the semiconductor substrate includes flowing a first gas in a vicinity of at least one wall of the chamber, flowing a second gas in a vicinity of the at least one heat source, and flowing a third gas in a vicinity of the semiconductor substrate.

REFERENCES:
patent: 4802441 (1989-02-01), Waugh
patent: 6200432 (2001-03-01), Kobayashi et al.
patent: 6435869 (2002-08-01), Kitamura
patent: 2004/0009644 (2004-01-01), Suzuki

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