Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate
2007-05-17
2009-12-01
Zarneke, David A (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Solder wettable contact, lead, or bond
C257S780000, C257S773000, C257SE23015
Reexamination Certificate
active
07626276
ABSTRACT:
A method provides an interconnect structure having enhanced structural support when underlying functional metal layers are insulated with a low modulus dielectric. A first metal layer having a plurality of openings overlies the substrate. A first electrically insulating layer overlies the first metal layer. A second metal layer overlies the first electrically insulating layer, the second metal layer having a plurality of openings. An interconnect pad that defines an interconnect pad area overlies the second metal layer. At least a certain amount of the openings in the two metal layers are aligned to improve structural strength of the interconnect structure. The amount of alignment may differ depending upon the application and materials used. A bond wire connection or conductive bump may be used with the interconnect structure.
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U.S. Appl. No. 11/033,009, filed Jan. 11, 2005.
Downey Susan H.
Hess Kevin J.
Miller James W.
Yong Cheng Choi
Freescale Semiconductor Inc.
Hill Susan C.
King Robert L.
Zarneke David A
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