Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-07-24
2007-07-24
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C716S030000, C257SE21023
Reexamination Certificate
active
10756830
ABSTRACT:
A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.
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Broeke Douglas Van Den
Chen Jang Fung
Hsu Stephen Duan-Fu
Laidig Thomas
Wampler Kurt E.
ASML Masktools B.V.
Everhart Caridad
McDermott Will & Emery LLP
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