Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-18
2007-12-18
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S665000, C257S228000, C257S230000, C257S147000, C257S139000, C438S048000, C438S215000, C327S525000, C365S225700
Reexamination Certificate
active
10063856
ABSTRACT:
A method and apparatus for improving the latchup tolerance of circuits embedded in an integrated circuit while avoiding the introduction of noise from such tolerance into the power rails.
REFERENCES:
patent: 4791317 (1988-12-01), Winnerl et al.
patent: 4873668 (1989-10-01), Winnerl et al.
patent: 58086759 (1983-05-01), None
patent: 58182863 (1983-10-01), None
patent: 1223761 (1989-09-01), None
patent: 2219260 (1990-08-01), None
Singh Raminderpal
Voldman Steven Howard
Crane Sara
Harding W. Riyon
Im Junghwa
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