Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-14
2011-06-14
Kebede, Brook (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257SE27133
Reexamination Certificate
active
07960765
ABSTRACT:
A method and apparatus providing an integrated circuit having a plurality of gate stack structures having gate oxide layers with differing thicknesses and nitrogen concentrations and gate electrodes with differing conductivity types and active dopant concentrations.
REFERENCES:
patent: 5989962 (1999-11-01), Holloway et al.
patent: 6329233 (2001-12-01), Pan et al.
patent: 6465786 (2002-10-01), Rhodes
patent: 6734113 (2004-05-01), Cho et al.
patent: 6821833 (2004-11-01), Chou et al.
patent: 6879340 (2005-04-01), Chevallier
patent: 6908839 (2005-06-01), Rhodes
patent: 2003/0086011 (2003-05-01), Wu et al.
patent: 2003/0157772 (2003-08-01), Wieczorek et al.
patent: 2004/0051123 (2004-03-01), Rhodes
patent: 2004/0102010 (2004-05-01), Khamankar et al.
patent: 2006/0043369 (2006-03-01), Varghese et al.
patent: 10-2006-0010949 (2006-02-01), None
T. Ohguro et al., The Impact of Oxynitride Process, Deuterium Annealing and STI Stress to 1/f Noise of 0.11 μm CMOS, 2003 Symopsium on VLSI Technology Digest of Technical Papers.
T. Ohguro, et al., A Study of Analog Characteristics of CMOS with Heavily Nitrided NO Oxynitrides, 2001 Symposium on VLSI Technology Digest of Technical Papers.
Moon, Chang-Rok et al., “The features and characteristics of 5M CMOS image sensor with 1.9X1.9μm2pixels,” IEEE Electron Devices Meeting, IEDM Technical Digest, Dec. 5-7, 2005, IEEE International.
Form PCT/ISA/206 and Annex to Form PCT/ISA/206—Communication Relating to the results of the Partial International Search, dated Jun. 20, 2007.
Mouli Chandra
Parekh Kunal R.
Aptina Imaging Corporation
Kebede Brook
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