Method and apparatus for providing a faster ones voltage level r

Details Method and apparatus for providing a faster ones voltage level r Method and apparatus for providing a faster ones voltage level r

1992-09-15

1994-02-08

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

365205, G11C 700

Patent

active

052854086

ABSTRACT:
There is a DRAM which provides for a faster non-accessed memory cell ones voltage level refresh or restore process. Specifically, the DRAM does not shut down a digit line's voltage pull-up circuitry (PSA) during a write operation. By leaving on the PSA, the digit lines being pulled to a ones voltage level will continue to be pulled up during the write operation. Thus, a non-accessed digit line will reach the ones voltage level in a shorter time than if the PSA were turned off during the write operation.

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patent: 5113372 (1992-05-01), Johnson

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