Method and apparatus for protecting gate electrodes of target tr

Details Method and apparatus for protecting gate electrodes of target tr Method and apparatus for protecting gate electrodes of target tr

1998-02-17

2000-09-05

Lintz, Paul R.

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

H01L 2362, H01L 2710

Patent

active

061136484

ABSTRACT:
In a gate array having a plurality of free transistors and target transistors, a method and apparatus for protecting a gate electrode of a target transistor from gate charge by employing a free transistor as a gate electrode protection device. A target transistor is a transistor that has been determined to need gate charging protection. A free transistor is a transistor in the gate array which is not used to implement the logic design as embodied in the gate array. Initially, a base array is formed without any metal layers. Then, a determination is made as to which transistors require gate charging protection. The gate electrode of each target transistor determined to require gate charging is coupled to an associated drain or source electrode of a free transistor of the gate array. The gate electrode of the free transistor is connected to an appropriate voltage reference to turn the free transistor off.

REFERENCES:
patent: 5581103 (1996-12-01), Mizukami
patent: 5623420 (1997-04-01), Yee et al.
patent: 5760445 (1998-06-01), Diaz
patent: 5793069 (1998-08-01), Schuelein et al.
patent: 5892379 (1999-04-01), Buxo et al.

Affiliated with

Also associated with

Rating

Method and apparatus for protecting gate electrodes of target tr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for protecting gate electrodes of target tr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for protecting gate electrodes of target tr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2207635