Method and apparatus for programming multi level cell flash...

Details Method and apparatus for programming multi level cell flash... Method and apparatus for programming multi level cell flash...

2006-06-16

2008-11-04

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Floating gate

Multiple values

C365S185180, C365S185220, C365S185230

Reexamination Certificate

active

07447067

ABSTRACT:
A method of programming a selected cell in a multi-level flash memory device comprises determining whether to program an upper bit or a lower bit of a selected memory cell, detecting a current logic state of two bits of data stored in the selected memory cell, determining a target logic state for the upper or lower bit, generating a program voltage and a verify voltage for programming the upper or lower bit to the target logic state, and applying the program voltage and the verify voltage to a word line connected to the selected memory cell.

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