Static information storage and retrieval – Read/write circuit – Erase
Patent
1992-06-10
1994-06-21
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Erase
365185, 365900, G11C 700
Patent
active
053233514
ABSTRACT:
A method of controllably programming an electrically erasable programmable read only memory comprises the step of erasing a group of memory cells of the memory into a high threshold state. The group including data cells and monitor cells. The data cells of the group are programmed in accordance with data presented to the memory, and the monitor cells of the group are programmed to a low threshold state. The threshold voltage of the monitor cells is sampled, and the monitor cell programming step and the sampling step are repeated until an excessively low threshold voltage is sampled. If the sampling is done with a sampling voltage higher than the read voltage, the cell threshold voltage generally is not excessive. In any event, an excessively low threshold is raised by a controlled erasure.
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LaRoche Eugene R.
Le Vu
Nexcom Technology, Inc.
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