Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-05-26
1995-08-22
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
365 96, 437922, H01L 2702
Patent
active
054442907
ABSTRACT:
An antifuse element has a dielectric layer comprising materials whose dielectric constant increases in the presence of a DC electric field, such as a ferroelectric. An applied AC electric field and a DC electric field breaks down the dielectric material to form a conductive filament. The AC electric field causes the physical reorientation of the electric dipole of the molecules in the ferroelectric material which creates heat within the ferroelectric material. The DC electric field enhances the heating effect of the AC electric field by enlarging the electric dipole of the ferroelectric molecules. The synergy of the two electric fields permits programming antifuse elements of the present invention by applying DC electric fields as low as 2 volts amplitude.
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Cuchiaro Joseph D.
McMillan Larry D.
Paz De Araujo Carlos A.
Carroll J.
Symetrix Corporation
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