Method and apparatus for producing silicon single crystal

Details Method and apparatus for producing silicon single crystal Method and apparatus for producing silicon single crystal

1992-03-17

1993-09-28

Kunemuno, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156600, 1566181, 1566204, 156DIG64, 156DIG89, 422245, 422249, C30B 1534

Patent

active

052483789

ABSTRACT:
A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal having a temperature in excess of 1150.degree. C. is spaced upwardly from a surface of silicon melt by a distance greater than 280 mm; and pulling the growing silicon single crystal upward while maintaining the pulling conditions. The silicon single crystal produced by this method has an excellent oxide film dielectric breakdown strength. An apparatus for carrying out the method is also disclosed.

REFERENCES:
patent: 4863554 (1989-09-01), Kawasaki et al.
patent: 4915773 (1990-04-01), Kravetsky et al.
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 4957713 (1990-09-01), Kravetsky et al.
patent: 4981549 (1991-01-01), Vanashita et al.
patent: 5009865 (1991-04-01), Boden et al.
Patent Abstracts of Japan, unexamined applications, C. field, vol. 12, No. 59, Feb. 23, 1988, The Patent Office Japanese Government, p. 5 C 478.

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