Method and apparatus for producing group III nitride

Details Method and apparatus for producing group III nitride Method and apparatus for producing group III nitride

2011-05-24

2011-05-24

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257SE21108, C118S715000

Reexamination Certificate

active

07947577

ABSTRACT:
A method of producing a group III nitride such as aluminum nitride, comprising the step of reacting a group III halide gas such as aluminum trichloride gas with a nitrogen source gas such as ammonia gas in a growth chamber to grow a group III nitride on a substrate held in the growth chamber, wherein the method further comprises premixing together the group III halide gas and the nitrogen source gas to obtain a mixed gas and then introducing the mixed gas into the growth chamber without forming a deposit in the mixed gas substantially to be reacted each other.For the growth of a group III nitride such as an aluminum-based group III nitride by HVPE, there are provided a method of producing the group III nitride having as high quality as that obtained by the method of the prior art at a high yield and an apparatus used in the method.

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