Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1980-08-14
1982-08-31
Bernstein, Hiram
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
422253, C30B 1906
Patent
active
043470971
ABSTRACT:
A method for performing successive mass production of identical semiconductor devices each having a multi-layer structure consisting of a plurality of epitaxial layers successively deposited on a substrate without requiring, for each deposition, any steps of cooling and re-heating a boat provided with a plurality of wells each containing a solution therein. An upper portion of each well is maintained at a predetermined temperature higher than that of a lower portion of the well which communicates with the upper portion so as to establish a constant temperature difference between the upper portion and the lower portion during the deposition of the epitaxial layers. A semiconductive solute material is soaked in the solution contained in the well to maintain the solution at a saturated concentration in the upper portion of the well and at a supersaturated concentration in the lower portion thereof. Movable slider means carrying thereon a plurality of substrates is successively moved to establish abutment of the lower portion of the well and either any one of the substrates arriving at the delivery end of the lower portion of the well for the deposition of the contents of the well onto the substrate to form an epitaxial layer thereon. Apparatus for practicing the method stated above is also disclosed.
REFERENCES:
patent: 3665888 (1972-05-01), Bergh et al.
patent: 3690965 (1972-09-01), Bergh et al.
patent: 3692592 (1972-09-01), Marinelli
patent: 3809584 (1974-05-01), Akai et al.
patent: 3897281 (1975-07-01), Gilbert et al.
Journal of Crystal Growth 6, 1970, pp. 228-236, Minden.
Panish et al., "Double-Heterostructure Injection Lasers with Room Temperature Thresholds as Low as 2300 A/cm.sup.2 ", Applied Physics Letters, vol. 16, No. 8, Apr. 1970, pp. 326, 327.
Denki Gakki Zasshi (literally: Electric Society Magazine), vol. 89 (11), pp. 2042-2051, 11/69.
Bernstein Hiram
Handotai Kenkyu Shinkokou
LandOfFree
Method and apparatus for producing a multilayer semiconductor de does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for producing a multilayer semiconductor de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for producing a multilayer semiconductor de will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2183217