Coating apparatus – Gas or vapor deposition – With treating means
Patent
1998-11-25
2000-09-05
Beck, Shrive
Coating apparatus
Gas or vapor deposition
With treating means
118724, C23C 1600
Patent
active
061137030
ABSTRACT:
A method and apparatus for processing opposing surfaces of a wafer. In one embodiment a semiconductor processing chamber is provided having an opening which allows for insertion of a wafer. A wafer holder is located within the semiconductor processing chamber for receiving the wafer. An inlet port allows flow of gas into the semiconductor processing chamber. An outlet port allows flow of gas from the semiconductor processing chamber. A first heat plate is mounted within the semiconductor processing chamber so that a first face of a wafer, when held by the wafer holder, faces towards the first heat plate. A first heat source is located to heat the first heat plate. A second heat plate is mounted in position within the semiconductor processing chamber so that a second face of the wafer, opposing the first face, faces towards the second heat plate. A second heat source is located to heat the second heat plate.
REFERENCES:
patent: 5790750 (1998-08-01), Anderson
patent: 5960159 (1999-09-01), Ikeda et al.
Anderson Roger N.
Arima Seiji
Kurihara Kunio
Venkatesan Mahalingam
Applied Materials Inc.
Beck Shrive
Hassanzadeh P.
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