Method and apparatus for processing the upper and lower faces of

Coating apparatus – Gas or vapor deposition – With treating means

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118724, C23C 1600

Patent

active

061137030

ABSTRACT:
A method and apparatus for processing opposing surfaces of a wafer. In one embodiment a semiconductor processing chamber is provided having an opening which allows for insertion of a wafer. A wafer holder is located within the semiconductor processing chamber for receiving the wafer. An inlet port allows flow of gas into the semiconductor processing chamber. An outlet port allows flow of gas from the semiconductor processing chamber. A first heat plate is mounted within the semiconductor processing chamber so that a first face of a wafer, when held by the wafer holder, faces towards the first heat plate. A first heat source is located to heat the first heat plate. A second heat plate is mounted in position within the semiconductor processing chamber so that a second face of the wafer, opposing the first face, faces towards the second heat plate. A second heat source is located to heat the second heat plate.

REFERENCES:
patent: 5790750 (1998-08-01), Anderson
patent: 5960159 (1999-09-01), Ikeda et al.

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