Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive...
Patent
1981-12-11
1984-01-17
Louie, Jr., Won H.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
430296, 430325, 430967, 354300, G03C 504
Patent
active
044264399
ABSTRACT:
A negative photoresist emulsion, wherein after a film of negative photoresist emulsion on a substrate has been exposed for pattern writing in vacuum to charged particle beams or soft X-ray beams, the film-coated substrate is transferred to, and kept in, a chamber filled with non-oxidizing gas, and then the substrate is removed to the outside atmosphere. By this method, a curing effect of the photoresist film is prevented, enabling formation of fine patterns with precision. An apparatus for carrying out the above method, has a gas chamber filled with non-oxidizing gas connected to an exposure chamber, and the substrate, after such exposure, is kept in an atmosphere of non-oxidizing gas in the gas chamber before being removed to the outside atmosphere. In either the above-method or apparatus, the concentration of oxygen in the non-oxidizing gas must be less than 5%, preferably less than 1%.
REFERENCES:
patent: 4286049 (1981-08-01), Imamura et al.
patent: 4298803 (1981-11-01), Matsuura et al.
NHK Laboratories Note, No. 253, Dated Aug. 1980, Tokyo, pp. 3-14.
Kawashima Ken'ichi
Kobayashi Koichi
Oshio Shuzo
Fujitsu Limited
Louie, Jr. Won H.
LandOfFree
Method and apparatus for processing negative photoresist does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for processing negative photoresist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for processing negative photoresist will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-700849