Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1994-11-21
1997-06-10
Breneman, R. Bruce
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
427596, 427598, 427 99, 438708, H01L 21302
Patent
active
056375387
ABSTRACT:
The invention relates to a method and to apparatus for processing a specimen, particularly an integrated circuit, in which an area of the specimen to be processed is scanned with a corpuscular beam and at least one gas is supplied above the area to be processed so that with the aid of the corpuscular beam a chemical reaction takes place on the area to be processed. The processing speed can be markedly increased by the use of a magnetic field in the region of the probe.
REFERENCES:
patent: 4394282 (1983-07-01), Seiver
patent: 4472636 (1984-09-01), Hahn
patent: 5345207 (1994-09-01), Gebele
Shinji Matsui, Toshinari Ichihashi, and Masanobu Mito: "Electron beam induced selective etching and deposition technology" J. Vac. Sci. Technol. B, vol. 7, No. 5 Sep./Oct. 1989.
Frosien Jurgen
Winkler Dieter
Zimmermann Hans
Acosta Vanessa
Act Advanced Circuit Testing Gesellschaft Fur
Breneman R. Bruce
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