Method and apparatus for processing a semiconductor wafer

Details Method and apparatus for processing a semiconductor wafer Method and apparatus for processing a semiconductor wafer

1988-09-29

1990-04-10

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

156345, 156643, 20429831, 20429833, 20429839, C23F 400

Patent

active

049158074

ABSTRACT:
An electrode (48) for generating molecular radicals to process a semiconductor wafer (52) is contained within an enclosure (56). A vacuum pump (58) is provided to evacuate the enclosure (56). A power source (50) powers plates (60), which are separated by grounded plates (62). A gas is introduced into the electrode (48) and is excited by the power source (50). The radicals created by the excitation pass through the electrode (48) to process the wafer (52). The alternately grounded and powered electrodes (60-62) cause electrons, created by the formation of the radicals, to travel back-and-forth between the plates. A circuitous path is provided through the electrode (48) by a grating (63) having protrusions (64-66) to further decrease the number of free electrons that escape, as well as to prevent the escape of ultraviolet light.

REFERENCES:
patent: 3932232 (1976-01-01), Labuda et al.
patent: 4424096 (1984-01-01), Kumagai
patent: 4776923 (1988-10-01), Spencer et al.

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