Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2011-05-17
2011-05-17
Hassanzadeh, Parviz (Department: 1716)
Coating apparatus
Gas or vapor deposition
With treating means
C118S7230IR, C118S7230ER, C118S7230ER, C156S345350, C156S345430, C156S345440, C156S345450, C156S345460, C156S345470, C156S345480, C315S111210, C315S111410, C315S111510, C315S111710
Reexamination Certificate
active
07942112
ABSTRACT:
A system and method for preventing formation of a plasma-inhibiting substance within a plasma chamber is provided. In one embodiment, an apparatus that includes a barrier component configured to be disposed within a plasma chamber. The barrier component includes a wall that defines a plasma formation region where a chemically-reducing species is formed from a fluid. A portion of the wall is formed of a substance that is substantially inert to the chemically-reducing species. The wall prevents the chemically-reducing species from interacting with an inner surface of the plasma chamber to form a conductive substance. The barrier component also includes an opening in fluid communication with the plasma formation region. The fluid is introduced into the plasma formation region via the opening.
REFERENCES:
patent: 5891350 (1999-04-01), Shan et al.
patent: 6156667 (2000-12-01), Jewett
patent: 6189484 (2001-02-01), Yin et al.
patent: 6291938 (2001-09-01), Jewett
patent: 6335535 (2002-01-01), Miyake et al.
patent: 6394026 (2002-05-01), Wicker et al.
patent: 6592707 (2003-07-01), Shih et al.
patent: 6692649 (2004-02-01), Collison et al.
patent: 6946063 (2005-09-01), Gonzalez et al.
patent: 2001/0035132 (2001-11-01), Kent et al.
patent: 2002/0104751 (2002-08-01), Drewery et al.
patent: 2005/0045107 (2005-03-01), Koroyasu et al.
patent: 2006/0191484 (2006-08-01), Mitrovic et al.
patent: 2008/0132078 (2008-06-01), Yamazaki
patent: 2000-133497 (2000-05-01), None
patent: 2006-073722 (2006-03-01), None
patent: WO 2006/044791 (2006-04-01), None
Gonzalez Juan Jose
Mauck Justin
Shabalin Andrew
Shaw Denis
Tomasel Fernando Gustavo
Advanced Energy Industries Inc.
Dhingra Rakesh
Hassanzadeh Parviz
Neugeboren O'Dowd PC
O'Dowd Sean R.
LandOfFree
Method and apparatus for preventing the formation of a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for preventing the formation of a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for preventing the formation of a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2668491