Method and apparatus for pretreating and depositing thin films o

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

118723, 118719, 118720, 118730, 427 38, 427251, B05D 306

Patent

active

043106145

ABSTRACT:
Deposition of continuous pin-hole free tellurium films with thicknesses to less than 150A on a suitable substrate is achieved by first pretreating the substrate prior to film deposition. Ion sputtering or bombardment of the substrate surface with an inert gas prior to tellurium evaporation creates a dense coverage of nucleation sites on the substrate which improves the adhesiveness and resistance to abrasion and oxidation of the deposited film while providing very thin pinhole free films of uniform thickness and desired crystallite orientation.

REFERENCES:
patent: 2373639 (1945-04-01), Turner
patent: 2467953 (1949-04-01), Bancroft et al.
patent: 2752882 (1956-07-01), Heimann
patent: 2799600 (1957-07-01), Scott
patent: 2997979 (1961-08-01), Tassara
patent: 3069286 (1962-12-01), Hall
patent: 3288638 (1966-11-01), Van Paassen et al.
patent: 3326177 (1967-06-01), Taylor
patent: 3402073 (1968-09-01), Pierce et al.
patent: 3472685 (1969-10-01), Marfaing et al.
patent: 3565686 (1971-02-01), Babcock et al.
patent: 3632439 (1972-01-01), Deklerk
patent: 3889632 (1975-06-01), Brunner et al.
patent: 3913520 (1975-10-01), Bers et al.
patent: 3914836 (1975-10-01), Hafner et al.
patent: 3921572 (1975-11-01), Brunner et al.
patent: 3936839 (1976-06-01), Freller
patent: 3939798 (1976-02-01), Morton
Maissel et al., Handbook of Thin Film Technology, McGraw-Hill Book Co., New York, pp. 6-41, 6-42, (1970).
Williams et al., "Materials Research Bull.", vol. 14, pp. 59-65, (Jan. 1979).
Holland, The Properties of Glass Surfaces, John Wiley & Sons, Inc., New York, (1964), pp. 310-335.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for pretreating and depositing thin films o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for pretreating and depositing thin films o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for pretreating and depositing thin films o will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1541796

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.