Method and apparatus for preparing integrated circuit thin films

Details Method and apparatus for preparing integrated circuit thin films Method and apparatus for preparing integrated circuit thin films

1997-07-14

2000-08-29

Padgett, Marianne

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

42725532, 42725536, 42725519, 438778, 438785, 438758, C23C 1640, C23C 1618, H01L 2131

Patent

active

061105317

ABSTRACT:
A mist is generated by a venturi from liquid precursors containing compounds used in chemical vapor deposition, transported in carrier gas through tubing at ambient temperature, passed into a heated zone where the mist droplets are gasified at a temperature of between 100.degree. C. and 200.degree. C., which is lower than the decomposition temperature of the precursor compounds. The gasified liquid is injected through an inlet assembly into a deposition reactor in which there is a substrate heated to from 400.degree. C. to 600.degree. C., on which the gasified compounds decompose and form a thin film of layered superlattice compound.

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