Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-01-31
1998-11-10
Beck, Shrive
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438680, 438685, 438694, 438710, 438711, 427534, 427250, 427255, 4272552, C23C 1606
Patent
active
058343717
ABSTRACT:
A CVD apparatus is equipped with a cleaning gas source, selectively connectable to a gas inlet of the chamber of the apparatus, structure, to supply a gas mixture of hydrogen and argon in which the hydrogen content is between 20 percent and 80 percent by volume. A selectively operable 450 MHz MF energy source is coupled to the chamber to energize a plasma in gas. A selectively operable 13.56 MHz HF energy source, controllable independently of the MF energy source and connected between the wafer support and a chamber anode biases a wafer on the support to less than 100 volts, preferably 15 to 35 volts, negative. A heater heats the wafer to temperature about 550.degree. C. Preferably, a turbo molecular pump is used to pump the cleaning gas while maintaining a pressure of between 1 mTorr and 10 Torr and at a rate of from 3 to 12 sccm.
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Ameen Michael S.
Hillman Joseph T.
Beck Shrive
Meeks Timothy
Tokyo Electron Limited
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