Coating apparatus – Gas or vapor deposition – With treating means
Patent
1995-01-25
1997-05-06
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118723MP, C23C 1600
Patent
active
056266790
ABSTRACT:
An ECR plasma CVD apparatus is used for forming a silicon oxide film on a semiconductor substrate. The gas pressure inside the apparatus is set within the range of 7.times.10.sup.-3 to 1.times.10.sup.-1 Tort and high frequency power is applied to the substrate. A cusp-shaped magnetic field is created. Due to a synergistic effect between the high frequency electric field and the cusp-shaped magnetic field, the film has an improved waterproofing property. The gas pressure inside the apparatus is controlled by controlling the cross sectional area of a bypassing conduit connected to an exhaust pipe, by introducing gas into the exhaust pipe in a central portion thereof, or by controlling the rotational speed of a vacuum pump. A subsolenoid is arranged such that the end of the subsolenoid that is nearest the substrate is disposed at a distance of 10 cm or more from the substrate, so that a cusp-shaped magnetic field can be created with a cusp plane positioned at a distance of 10 cm or less from the substrate on either side thereof.
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Shimizu Akio
Tsuji Naoto
Breneman R. Bruce
Chang Toni Y.
Fuji Electric & Co., Ltd.
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