Etching a substrate: processes – Nongaseous phase etching of substrate – Etching inorganic substrate
Patent
1998-03-04
2000-01-04
Breneman, Bruce
Etching a substrate: processes
Nongaseous phase etching of substrate
Etching inorganic substrate
156345, 134 2, C03C 2506
Patent
active
060106379
ABSTRACT:
A method for preparing a sample for its optical analysis in the manufacture of a semiconductor device includes the step of drying a liquid formed on the semiconductor wafer until the concentration of contaminants contained in the liquid is of a sufficiently high level for the optical analyzer to adequately detect the contaminants. The liquid may be of a film formed on the wafer and dissolved into liquid drops, or deionized water or various chemicals to which the wafer is exposed during a manufacturing process. The apparatus includes a chuck for bringing the wafer into and out of a processing chamber, a guide for guiding the chuck, a piston cylinder for driving the chuck along the guide to a processing position, and a gas supplying system which directs nitrogen gas onto the wafer for drying the liquid. Appropriate controls are provided so that the apparatus can be operated automatically or manually.
REFERENCES:
patent: 5540821 (1996-07-01), Tepman
patent: 5686314 (1997-11-01), Miyazaki
patent: 5730801 (1998-03-01), Tepman et al.
Lee Chun-deuk
Lee Hyun-woon
Lee Jung-keun
Lee Kyoung-seop
Breneman Bruce
Powell Alva C
Samsung Electronics Co,. Ltd.
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