Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2005-04-26
2005-04-26
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S393000
Reexamination Certificate
active
06884737
ABSTRACT:
A method for providing a precursor to a supercritical processing chamber is provided. The precursor in solid form is provided in an ampoule external to the supercritical processing chamber. A fluid is provided to the ampoule, where at least a portion of the gas enters the solid precursor causing a melting point of the precursor to be depressed and thereby causing the solid precursor to melt. The melted precursor is delivered to the supercritical process chamber.
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U.S. Appl. No. 09/727,796, file date: Nov. 30, 2000.
U.S. Appl. No. 10/016,017, file date: Dec. 12, 2001.
Blackburn Jason M.
Dalton Jeremie
Beyer Weaver & Thomas LLP
Luk Olivia
Niebling John F.
Novellus Systems Inc.
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