Method and apparatus for polishing a semiconductor device

Details Method and apparatus for polishing a semiconductor device Method and apparatus for polishing a semiconductor device

2008-05-13

2008-05-13

Tran, Binh X. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C216S084000, C216S085000, C216S086000, C216S089000

Reexamination Certificate

active

07371686

ABSTRACT:
A method and an apparatus for polishing a semiconductor wafer are provided. An initial thickness of the semiconductor wafer is actually measured to obtain a measured initial thickness value. First and second inter-positions are then set or determined with reference to the measured initial thickness value. The first and second inter-positions are predetermined taking into account any variation in the initial thickness of the semiconductor wafer. A polishing process is carried out under control to a motion of a polishing pad toward a stage, on which the semiconductor pad is held.

REFERENCES:
patent: 6594542 (2003-07-01), Williams
patent: 2005/0260922 (2005-11-01), Gan et al.
patent: 09-155722 (1997-06-01), None

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