Method and apparatus for plasma etching a substrate

Details Method and apparatus for plasma etching a substrate Method and apparatus for plasma etching a substrate

1983-01-31

1984-11-20

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 204192E, 204298, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044837372

ABSTRACT:
A method and apparatus for plasma etching a substrate, such as a semiconductor wafer, utilizing a multipole surface magnetic field confining within an etching chamber an etching plasma of substantially uniform density throughout its volume. The plasma is produced and maintained by subjecting a gas such as CF.sub.4 to an ionizing discharge within the chamber. Only DC power sources are used for the discharge, so that there is virtually no perturbing radio frequency interference produced. The wafer is consequently easily biased relative to the plasma for controlled fine-scale etching. Low gas pressures permitted by the surface magnetic field result in substantially anisotropic etching of the substrate by dense plasma concentrations.

REFERENCES:
patent: 4361472 (1982-11-01), Morrison

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