Method and apparatus for plasma etching

Details Method and apparatus for plasma etching Method and apparatus for plasma etching

1985-03-11

1986-06-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156644, 156646, 156653, 156657, 1566591, 204192E, 204298, B44C 122, C03C 1500, C03C 2506

Patent

active

045954526

ABSTRACT:
The invention comprises a novel method and apparatus for plasma etching a semiconductor workpiece so as to produce chamfering at the outer edges of depressions or grooves in the workpiece, e.g., depressions or grooves in a substrate or one or more layers on the substrate. The novel apparatus comprises a first gas feeder means for delivering an etchant gas at a right angle to the workpiece, and a second gas feeder means for delivering an etchant gas at an acute angle to the workpiece.

REFERENCES:
patent: 4270999 (1981-06-01), Hassan et al.
patent: 4328081 (1982-05-01), Fazlin

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